X-ray diffraction study on self-organization of InAs islands on GaAs(001)
نویسنده
چکیده
The molecular beam epitaxial (MBE) growth and postgrowth annealing of InAs/GaAs(001) quantum dots were investigated by grazing-incidence X-ray diffraction using a diffractometer integrated with an MBE apparatus. The use of synchrotron radiation and a two-dimensional X-ray detector enabled X-ray diffraction measurements on the internal strains and height of dots at a rate of less than 10 s per frame. Mass transport by surface diffusion was found to play a major role in the nucleation of three-dimensional islands of InAs/GaAs(001).
منابع مشابه
X-ray Scattering from Self-Assembled InAs Islands
In this work several structural and chemical properties of self-assembled InAs islands grown on GaAs(001) are studied using surface x-ray scattering with synchrotron radiation. The technique of x-ray diffraction under grazing incidence condition was employed to differentiate coherent and incoherent islands. We used a model of a strained pyramidal island to interpret the x-ray results and correl...
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